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PD - 97226A
DirectFET Power MOSFET
RoHs Compliant l Lead-Free (Qualified up to 260C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V-75V in Synchronous Buck applications l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6655PBF IRF6655TRPbF
RDS(on) Qoss
4.5nC 53m@ 10V
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
2.8nC
100V max 20V max
Qgs2
0.58nC
Qrr
37nC
Vgs(th)
4.0V
8.7nC
SH
MN
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT
Description
The IRF6655PBF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6655PBF is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
200 180 160 140 120 100 80 60 40 20 0 4 6 8
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
100 20 4.2 3.4 19 34 11 5.0
12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 2 4 6 8 ID= 5.0A VDS= 80V VDS= 50V VDS= 20V
A
mJ A
Typical RDS(on) (m)
ID = 5.0A
T J = 125C
T J = 25C 10 12 14 16 18
10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance Vs. Gate Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.89mH, RG = 25, IAS = 5.0A.
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08/25/06
IRF6655PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
100 --- --- 2.8 --- --- --- --- --- 6.6 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 0.12 53 4.0 -11 --- --- --- --- --- 8.7 2.1 0.58 2.8 3.2 3.4 4.5 1.9 7.4 2.8 14 4.3 530 110 29 510 67 --- --- 62 4.8 --- 20 250 100 -100 --- 11.7 --- --- 4.2 --- --- --- 2.9 --- --- --- --- --- --- --- --- --- pF ns nC
Conditions
VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 5.0A i V mV/C A nA S VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 5.0A VDS = 50V nC VGS = 10V ID = 5.0A See Fig. 15 VDS = 16V, VGS = 0V VDD = 50V, VGS = 10V ID = 5.0A RG=6.0 See Fig. 16 & 17 VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 80V, f=1.0MHz i VDS = VGS, ID = 25A
--- --- --- --- --- --- --- --- ---
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) g Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 31 37 34 1.3 47 56 V ns nC
Min.
---
Typ. Max. Units
--- 38 A
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 5.0A, VGS = 0V i TJ = 25C, IF = 5.0A, VDD = 25V di/dt = 100A/s i See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6655PBF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
2.2 1.4 42 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
em km lm fm e
Parameter
Typ.
--- 12.5 20 --- 1.4 0.017
Max.
58 --- --- 3.0 ---
Units
C/W
W/C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 4
R5 R5 A 5 A
Ri (C/W)
1.6195 2.1406 22.2887 20.0457 11.9144
i (sec)
0.000126 0.001354 0.375850 7.410000 99
1
2
3
4
5
0.1
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.01 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6655PBF
100
TOP VGS 15V 10V 9.0V 8.0V 7.0V 6.0V
100
TOP VGS 15V 10V 9.0V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10 6.0V
BOTTOM
6.0V 1
1
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 150C 10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100
Fig 5. Typical Output Characteristics
2.0 ID = 5.0A VGS = 10V
ID, Drain-to-Source Current ()
10
Typical RDS(on), (Normalized)
12
1.5
T J = -40C T J = 25C 1 T J = 150C VDS = 25V 60s PULSE WIDTH 0.1 2 4 6 8 10
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 7. Normalized On-Resistance vs. Temperature
RDS(on), Drain-to -Source On Resistance ( m)
120
100
T J = 125C
C, Capacitance(pF)
1000 Ciss Coss 100 Crss
80
60
T J = 25C Vgs = 10V
10 1 10 VDS, Drain-to-Source Voltage (V) 100
40 0 2 4 6 8 10 ID, Drain Current (A)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 9. Normalized Typical On-Resistance vs. Drain Current and Gate Voltage
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IRF6655PBF
100 1000 Tc = 25C Tj = 175C Single Pulse
OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100msec
10 T J = -40C T J = 25C T J = 150C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
1
1msec 10msec
0.1
0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
5
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
5.5 5 4.5 4 3.5 ID = 25A 3 2.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) ID = 250A ID = 1.0A
4
ID, Drain Current (A)
3
2
1
ID = 1.0mA
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
50
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
ID 0.86A 1.3A BOTTOM 5.0A TOP
40
30
20
10
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6655PBF
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
90%
D.U.T.
+
VDS
-
VDD
10%
VGS
td(on) tr td(off) tf
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6655PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFETTM Substrate and PCB Layout, SH Outline (Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D G D S
D
D
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IRF6655PBF
DirectFET Outline Dimension, SH Outline (Small Size Can, H-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.67 G 0.63 0.87 H 0.83 K 0.99 1.03 2.33 L 2.29 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08 IMPERIAL MIN 0.187 0.146 0.108 0.014 0.023 0.023 0.025 0.033 0.039 0.090 0.0235 0.0008 0.003
AMAX
0.191 0.156 0.112 0.018 0.024 0.024 0.026 0.034 0.041 0.092 0.0274 0.0031 0.007
DirectFET Part Marking
8
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IRF6655PBF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6655TRPBF). For 1000 parts on 7" reel, order IRF6655TR1PBF STANDARD OPTION METRIC CODE MAX MIN A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC MIN MAX MIN MAX MIN MAX 12.992 N.C 6.9 N.C 177.77 N.C 0.795 0.75 N.C N.C 19.06 N.C 0.504 0.53 0.50 0.520 13.5 12.8 0.059 0.059 1.5 N.C N.C N.C 3.937 2.31 58.72 N.C N.C N.C N.C N.C 0.53 N.C 0.724 13.50 0.488 0.47 11.9 N.C 0.567 12.01 0.469 0.47 11.9 0.606 N.C 12.01
Loaded Tape Feed Direction
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.158 0.165 4.00 4.20 0.197 0.205 5.00 5.20 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/06
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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